PJA55P03 features ? r ds(on) , v gs @-10v,i d @-4.3a < 48 m ? r ds(on) , v gs @-4.5v,i d @-3.5a < 55 m ? advanced trench process technology ? high density cell design for ultra low on-resistance ? specially designed for dc/dc converters ? low voltage application ? lead free in comply with eu rohs 2002/95/ec directives. ? green molding compound as per iec61249 std. . (halogen free) mechanical data ? case: sot-23-1 package ? terminals : solderable per mil-std-750,method 2026 ? apporx. weight : 0.0003 ounces, 0.0084grams ? marking : 55 30v p-channel enhancement mode mosfet maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted ) notes: 1. mounted on 48cm 2 fr-4 pcb . parameter symbol limit units drain-source voltage v ds -30 v gate-source voltage v gs + 12 v continuous drain current steady-state t a =25 o ci d -4.3 a pulsed drain current i dm -20 a power dissipation (notes 1) steady-state t a =25 o cp d 1.25 w typical thermal resistance (notes 1) r ja 120 o c/w operating junction temperature and storage temperature range t j ,t stg -55 to + 150 o c voltage 30 volts 4.3 amperes current 0.119(3.02) 0.111(2.82) 0.067(1.70) 0.059(1.50) 0.079(2.00) 0.071(1.80) 0.004(0.10)max. 0.020(0.50) 0.012(0.30) 0.045(1.15) 0.041(1.05) 0.024(0.6) 0.008(0.20) 0.004(0.10) 0.012(0.3) 0.049(1.25) 0.041(1.05) 0~8 o 0.008(0.20) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 o c unless otherwise noted ) parameter symbol test condition min. typ. max. units static drain-source breakdown voltage bv dss v gs =0v, i d =-250 a-30--v gate threshold voltage v gs(th) v ds =v gs , i d =-250 a -0.5 -1.0 -1.7 v drain-source on-state resistance r ds(on) v gs = -10v, i d = -4.3a - 4 0 4 8 m v gs = -4.5v, i d = -3.5a - 46 55 zero gate voltage drain current i dss v ds = -30v, v gs =0v - - -1 a gate -source leakage current i gss v gs = + 12v, v ds =0v - - + 100 na diode forward voltage v sd i s = -1a, v gs =0v - - 0 . 7 8 - 1 . 5 v dynamic total gate charge q g v ds = -15v, i d = -3.5a v gs = -10v - 26.8 - nc gate-source charge q gs -2.53- gate-drain charge q gd -2.96- tur n-on d e la y ti me td on v dd = -15v , v gen = -10v, r g = 6 , r l = 15 , i d = -1.0a - 10.8 - ns turn-off delay time td off - 64.8 - tur n-on ri s e ti m e t r - 18.8 - tur n-off f a ll ti m e t f -9.6- input capacitance c iss v ds = -15v, v gs =0v f=1.0mh z - 1330 - pf output capacitance c oss - 105 - reverse transfer capacitance c rss -88- PJA55P03 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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